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 ON Semiconductort
One Watt Darlington Transistors
PNP Silicon
w
These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.
MPSW63 MPSW64 *
*ON Semiconductor Preferred Device
MAXIMUM RATINGS
Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPSW63 MPSW64 -30 -30 -10 -500 1.0 8.0 2.5 20 -55 to +150 Unit Vdc Vdc Vdc mAdc Watt mW/C Watts mW/C C
1
2
3
CASE 29-10, STYLE 1 TO-92 (TO-226AE)
COLLECTOR 3 BASE 2
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W EMITTER 1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector -Emitter Breakdown Voltage (IC = -100 Adc, VBE = 0) Collector Cutoff Current (VCB = -30 Vdc, IE = 0) Emitter Cutoff Current (VEB = -10 Vdc, IC = 0) V(BR)CES ICBO IEBO -30 -- -- -- -100 -100 Vdc nAdc nAdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2006
March, 2006 - Rev. 3
1
Publication Order Number: MPSW63/D
MPSW63 MPSW64
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = -10 mAdc, VCE = -5.0 Vdc) (IC = -100 mAdc, VCE = -5.0 Vdc) Collector-Emitter Saturation Voltage (IC = -100 mAdc, IB = -0.1 mAdc) Base-Emitter On Voltage (IC = -100 mAdc, VCE = -5.0 Vdc) MPSW63 MPSW64 MPSW63 MPSW64 VCE(sat) VBE(on) hFE -- 5,000 10,000 10,000 20,000 -- -- -- -- -- -- -1.5 -2.0 Vdc Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -- Bandwidth Product(2) (IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = |hfe| * ftest. fT 125 -- MHz
TYPICAL ELECTRICAL CHARACTERISTICS
200 h FE, DC CURRENT GAIN (X1.0 k) 100 70 50 30 20 10 7.0 5.0 3.0 2.0 -0.3 TJ = 125C
25C VCE = -2.0 V -5.0 V -55C
-10 V
-0.5
-0.7
-1.0
-2.0
-3.0
-5.0
-7.0
-10
-20
-30
-50
-70
-100
-200
-300
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -2.0 TJ = 25C -1.6 V, VOLTAGE (VOLTS) -1.2 -0.8 -0.4 0 -0.3 -0.5 -1.0 VCE(sat) @ IC/IB = 1000 IC/IB = 100 VBE(sat) @ IC/IB = 100 VBE(on) @ VCE = -5.0 V -2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.1 -0.3 IC = -10 mA -1.0 -3.0 -10 -30 -100 -300 -1 k -3 k -10 k -50 mA -100 mA -175 mA -300 mA
TJ = 25C
-3.0 -5.0
-10
-30 -50 -100
-300
IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 2. "ON" Voltage
Figure 3. Collector Saturation Region
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2
MPSW63 MPSW64
+4.0 +3.0 +2.0 +1.0 0 -1.0 -2.0 -3.0 -4.0 RqVB FOR VBE -2.0 -5.0 -10 -20 -5.0 -0.3 -0.5 -1.0 *RqVC FOR VCE(sat) -50C TO +25C +25C TO +125C -50 -100 -300 +25C TO +125C -50C TO +25C *APPLIES FOR IC/IB hFE/100 f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) R qV , TEMPERATURE COEFFICIENT (mV/ C) +5.0 600 400 300 200 100 60 40 30 20 -0.3 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -300 -10 V -5.0 V TJ = 25C VCE = -20 V
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficients
Figure 5. Current-Gain -- Bandwidth Product
20 15 C, CAPACITANCE (pF) 10 7.0 5.0
Cobo IC , COLLECTOR CURRENT (mA) Cibo
-2 k
-1 k
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1.0 mS
100 ms
-500 1.0 s TA = 25C DUTY CYCLE 10% -5.0 -10 -20 -30 TC = 25C
TJ = 25C f = 1.0 MHz
3.0 2.0 -0.1 -0.2
-200
-0.5
-1.0
-2.0
-5.0
-10
-20 -30
-100 -1.5 -2.0
VR, REVERSE VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
Figure 7. Active Region, Safe Operating Area
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MPSW63 MPSW64
PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-10 ISSUE AL
A B P F
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 3.43 ---
R L
K
XX G H R
123
D J SECTION X-X
NC
N
YLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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4
MPSW63/D


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